Michael Krieger elected to the FAU LMQ Executive Board
We are excited to share that Michael Krieger was elected to the FAU LMQ Executive Board on 22nd November 2024!
Dr. Michael Krieger, Akad. ORat
Institute of Condensed Matter Physics
Chair of Applied Physics
Staudtstr. 7 / Bau A3
91058 Erlangen
- Phone number: +49 9131 85-28427
- Email: michael.krieger@fau.de
- Website: https://www.lap.physik.nat.fau.de/
Posts
FAU LMQ People Spotlight: Michael Krieger
In this FAU LMQ People Spotlight, we interviewed our member Michael Krieger, who is a senior scientist at the Chair for…
NOMAD CAMELS version 1.0 released
NOMAD CAMELS is a new open-source software developed at the Chair of Applied Physics that generates future-oriented research data in…
FAU LMQ welcomes eight new members
The FAU Profile Center Light.Matter.QuantumTechnologies will be further strengthened by eight new members Daniel Burgarth, Department of Physics Dirk Guldi,…
Publications
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NOMAD CAMELS: Configurable Application for Measurements, Experiments and Laboratory Systems
In: Journal of Open Source Software (2024)
ISSN: 2475-9066
DOI: 10.21105/joss.06371
URL: https://joss.theoj.org/papers/10.21105/joss.06371 - , , , , , , , , , , , :
Optical and electrical studies on the TS defect in 4H-SiC
In: Journal of Physics D-Applied Physics 58 (2024), Article No.: 015105
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ad7bc5
- , , , , :
Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
In: Scientific Reports 13 (2023), Article No.: 19086
ISSN: 2045-2322
DOI: 10.1038/s41598-023-46110-2
URL: https://www.nature.com/articles/s41598-023-46110-2 - , , , , , :
Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D: Applied Physics 56 (2023), Article No.: 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127 - , , , , , :
Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D-Applied Physics 56 (2023), p. 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127 - , , , :
Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques
In: Electronics Letters (2023), Article No.: e12752
ISSN: 0013-5194
DOI: 10.1049/ell2.12752 - , , , , , :
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC
In: Defect and Diffusion Forum 426 (2023), p. 17-21
ISSN: 1012-0386
DOI: 10.4028/p-02xh85 - , , , , , , :
The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
In: Defect and Diffusion Forum 426 (2023), p. 43-48
ISSN: 1012-0386
DOI: 10.4028/p-90qste - , , , , , , , , :
Research Data Management for Experiments in Solid-State Physics: Concepts
1st Conference on Research Data Infrastructure (Karlsruhe, 11. September 2023 - 15. September 2023)
DOI: 10.52825/CoRDI.v1i.283
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Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy
34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (Vancouver, BC, 22. May 2022 - 25. May 2022)
In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2022
DOI: 10.1109/ISPSD49238.2022.9813648 - , , , :
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
In: Materials Science Forum 1062 (2022), p. 49-53
ISSN: 0255-5476
DOI: 10.4028/p-f26rb5 - , , , , :
Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
In: Materials Research Express 9 (2022), Article No.: 125901
ISSN: 2053-1591
DOI: 10.1088/2053-1591/acaa1f - , , :
Früh zur Datenkompetenz
In: Physik Journal 21 (2022), p. 42
ISSN: 1617-9439
Open Access: https://www.pro-physik.de/restricted-files/158142
URL: https://www.pro-physik.de/restricted-files/158142