FAU LMQ Insight Talks – Summer Semester 2026
This semester, we continue the FAU LMQ Insight Talk series given by members of the FAU LMQ. These talks are…
Prof. Dr. sc. techn. Bernd Witzigmann
Lehrstuhlinhaber
Konrad-Zuse-Strasse 3/5
91052 Erlangen
Department of Electrical-Electronic-Communication Engineering
Institute of Optoelectonics
Konrad-Zuse-Strasse 3/5
91052 Erlangen
- Phone number: +49 9131 85-28952
- Fax number: +49 9131 85-27787
- Email: bernd.witzigmann@fau.de
- Website: https://www.ote.tf.fau.de/lehrstuhl/mitarbeiter/
Posts
FAU LMQ People Spotlight: Bernd Witzigmann
In this FAU LMQ People Spotlight, we interviewed our member Bernd Witzigmann, who is chair holder of Optoelectronics at the…
FAU LMQ Research Spotlight: How to overcome the efficiency limits in ultraviolet LEDs
Light emitting diodes (LEDs) provide an efficient way to convert electrical to optical power. Aluminum gallium nitride (AlGaN) LEDs produce…
Publications
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Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations
OPTO (San Francisco, 25. January 2025 - 31. January 2025)
In: Proceedings Volume PC13360, Physics and Simulation of Optoelectronic Devices XXXIII 2025
DOI: 10.1117/12.3042015 - , :
Theoretical Analysis of a pn-Diode on AIN with Distributed Polarization Doping
In: physica status solidi (a) (2025)
ISSN: 1862-6300
DOI: 10.1002/pssa.202500629 - , , , , , , , , , , :
Modelling Electron Beam Induced Current in III-Nitride Light Emitting Diodes
2025 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2025 (Lodz, POL, 14. September 2025 - 18. September 2025)
In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2025
DOI: 10.1109/NUSOD64393.2025.11199473
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Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single-Quantum-Well Active Regions
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400067 - , , :
Simulation Study of Aluminum Nitride TrenchFETs with Polarization-Induced Doping
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400045 - , , , , , , :
Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes
In: IEEE Photonics Journal (2024), p. 1-8
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3430488 - , , , , , , , , , :
Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
In: Applied Physics Letters 125 (2024), Article No.: 071109
ISSN: 0003-6951
DOI: 10.1063/5.0223284 - , , , , , , , :
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
In: Nanotechnology 35 (2024), Article No.: 215206
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ad2bd0 - , , , :
Modifying the Complex Refractive Index of Thin-Films for Nanooptical Applications
2024 International Conference on Optical MEMS and Nanophotonics, OMN 2024 (San Sebastian, 28. July 2024 - 1. August 2024)
In: 2024 International Conference on Optical MEMS and Nanophotonics (OMN) 2024
DOI: 10.1109/OMN61224.2024.10685281 - , , , , , , , , :
Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
In: IEEE Photonics Journal 16 (2024), p. 1-5
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3379231 - , , , , , , , :
Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
In: IEEE Photonics Journal (2024), p. 1-6
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3351965
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Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
In: ACS Photonics (2023)
ISSN: 2330-4022
DOI: 10.1021/acsphotonics.2c02024 - , , , , , , , , :
Simulation of optical gain in AlGaN quantum wells
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (ed.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273539 - , , , , , , , :
Effect of the Hole Mobility on the Emission Spectrum of a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, ITA, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (ed.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273498 - , :
Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study
Physics and Simulation of Optoelectronic Devices XXXI 2023 (San Francisco, CA, USA, 31. January 2023 - 2. February 2023)
In: Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa (ed.): Proceedings of SPIE - The International Society for Optical Engineering 2023
DOI: 10.1117/12.2652797
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Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
In: Frequenz (2022)
ISSN: 0016-1136
DOI: 10.1515/freq-2022-0078 - , , , , , , , , , , , , :
Quantitative protein sensing with germanium THz-antennas manufactured using CMOS processes
In: Optics Express 30 (2022), p. 40265-40276
ISSN: 1094-4087
DOI: 10.1364/OE.469496 - , , , , , , , :
Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes
2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022 (Turin, 12. September 2022 - 16. September 2022)
In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
DOI: 10.1109/NUSOD54938.2022.9894749