Prof. Dr. Bernd Witzigmann
Chair of Optoelectronics
Professors
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Konrad-Zuse-Straße 3-5 91052 ErlangenRoom: 01.045, Floor: 01
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Posts
FAU LMQ Insight Talks – Summer Semester 2026
This semester, we continue the FAU LMQ Insight Talk series given by members of the FAU LMQ. These talks are…
FAU LMQ People Spotlight: Bernd Witzigmann
In this FAU LMQ People Spotlight, we interviewed our member Bernd Witzigmann, who is chair holder of Optoelectronics at the…
FAU LMQ Research Spotlight: How to overcome the efficiency limits in ultraviolet LEDs
Light emitting diodes (LEDs) provide an efficient way to convert electrical to optical power. Aluminum gallium nitride (AlGaN) LEDs produce…
Publications
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Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations
OPTO (San Francisco, 25. January 2025 - 31. January 2025)
In: Proceedings Volume PC13360, Physics and Simulation of Optoelectronic Devices XXXIII 2025
DOI: 10.1117/12.3042015 - , :
Theoretical Analysis of a pn-Diode on AIN with Distributed Polarization Doping
In: physica status solidi (a) (2025)
ISSN: 1862-6300
DOI: 10.1002/pssa.202500629 - , , , , , , , , , , :
Modelling Electron Beam Induced Current in III-Nitride Light Emitting Diodes
2025 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2025 (Lodz, POL, 14. September 2025 - 18. September 2025)
In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2025
DOI: 10.1109/NUSOD64393.2025.11199473
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Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single-Quantum-Well Active Regions
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400067 - , , :
Simulation Study of Aluminum Nitride TrenchFETs with Polarization-Induced Doping
In: physica status solidi (a) (2024)
ISSN: 1862-6300
DOI: 10.1002/pssa.202400045 - , , , , , , :
Simulation of Carrier Injection Efficiency in AlGaN-based UV-light-emitting Diodes
In: IEEE Photonics Journal (2024), p. 1-8
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3430488 - , , , , , , , , , :
Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
In: Applied Physics Letters 125 (2024), Article No.: 071109
ISSN: 0003-6951
DOI: 10.1063/5.0223284 - , , , , , , , :
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
In: Nanotechnology 35 (2024), Article No.: 215206
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ad2bd0 - , , , :
Modifying the Complex Refractive Index of Thin-Films for Nanooptical Applications
2024 International Conference on Optical MEMS and Nanophotonics, OMN 2024 (San Sebastian, 28. July 2024 - 1. August 2024)
In: 2024 International Conference on Optical MEMS and Nanophotonics (OMN) 2024
DOI: 10.1109/OMN61224.2024.10685281 - , , , , , , , , :
Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
In: IEEE Photonics Journal 16 (2024), p. 1-5
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3379231 - , , , , , , , :
Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
In: IEEE Photonics Journal (2024), p. 1-6
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2024.3351965
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Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
In: ACS Photonics (2023)
ISSN: 2330-4022
DOI: 10.1021/acsphotonics.2c02024 - , , , , , , , , :
Simulation of optical gain in AlGaN quantum wells
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (ed.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273539 - , , , , , , , :
Effect of the Hole Mobility on the Emission Spectrum of a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 (Turin, ITA, 18. September 2023 - 21. September 2023)
In: Paolo Bardella, Alberto Tibaldi (ed.): Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
DOI: 10.1109/NUSOD59562.2023.10273498 - , :
Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study
Physics and Simulation of Optoelectronic Devices XXXI 2023 (San Francisco, CA, USA, 31. January 2023 - 2. February 2023)
In: Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa (ed.): Proceedings of SPIE - The International Society for Optical Engineering 2023
DOI: 10.1117/12.2652797
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Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
In: Frequenz (2022)
ISSN: 0016-1136
DOI: 10.1515/freq-2022-0078 - , , , , , , , , , , , , :
Quantitative protein sensing with germanium THz-antennas manufactured using CMOS processes
In: Optics Express 30 (2022), p. 40265-40276
ISSN: 1094-4087
DOI: 10.1364/OE.469496 - , , , , , , , :
Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes
2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022 (Turin, 12. September 2022 - 16. September 2022)
In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
DOI: 10.1109/NUSOD54938.2022.9894749